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Full text of "USPTO Patents Application 10711758"

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P27195.A02 BUR920040090US1 

AMENDMENT TO THE CLAIMS 
Please AMEND claims 1 and 8 as follows. 
Please CANCEL claims 15-20 without prejudice or disclaimer. 
Please ADD claims 21-26 as follows. 

A copy of all pending claims and a status of the claims is provided below. 

1 . (Currently Amended) A method o f combining a wid e - imag e mask and loop cutter 
mas k semiconductor fabrication, comprising the steps of: 

forming a sidewall image transfer (SIT) loop on a substrate such that the SIT loop forms 
a hard mask; 

protecting a pair of critical edges of a-the hard mask on arthe substrate with a first portion 
of a follow-on mask; 

forming a wide-image mask on the substrate proximate the hard mask with a second 
portion of the follow-on mask; 

removing an exposed portion of the hard mask; and 
exposing the pair of critical edges of the hard mask. 

2. (Original) The method of claim 1, further comprising removing a portion of the hard 
mask left exposed by the follow-on mask. 

3. (Original) The method of claim 2, further comprising exposing the pair of critical 
edges of the hard mask by removing the first portion of the follow-on mask. 



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P27195.A02 BUR920040090US1 

4. (Original) The method of claim 3, further comprising exposing the pair of critical 
edges of the hard mask by etching the first portion of the follow-on mask from at least either a 
side or a top of the &st portion of the follow-on mask. 

5. (Original) The method of claim 4, further comprising removing a section of a sidewall 
of the second portion of the follow-on mask and then replacing a portion of the removed section 
of the sidewall of the second portion of the follow-on mask. 

6. (Original) The method of claim 5, further comprising replacing a portion of the 
removed section of the sidewall of the second portion of the follow-on mask so that the second 
portion of the follow-on mask substantially aligns with a corresponding portion of a final shape. 

7. (Original) The method of claim 1, further comprising sizing the first portion of the 
follow-on mask to protect the critical edges of the hard mask when the follow-on mask is mis- 
registered by less than a predetermined amount. 

8. (Currently Amended) A method of combining a wide imag e mask and a loop cutter 
mas ksemiconductor fabrication, comprising the steps of: 

forming a sidewall image transfer (SIT) loop on a substrate such that the SIT loop forms 
a hard mask: 

forming a follow-on mask in a loop-cutter pattern on a portion of a -the hard mask, 
wherein the follow-on mask comprises a wide-image section and a narrow-image section; 
removing a portion of the hard mask left exposed by the follow-on mask; and 



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P27195.A02 BUR920040090US1 
removing at least a portion of the narrow-image section of the follow-on mask. 



9. (Original) The method of claim 8, ftirther comprising sizing the narrow-image section 
to cover a portion of the hard mask when the follow-on mask is mis-registered by less than a 
prescribed amount. 

10. (Original) The method of claim 8, ftirther comprising sizing the wide-image section 

of the follow-on mask to substantially align with a corresponding wide section of a final 
structure. 

1 1 . (Original) The method of claim 8, ftirther comprising removing a portion of the hard 
mask left exposed by the follow-on mask. 

12. (Original) The method of claim 8, ftirther comprising removing at least a portion of 
the narrow-image section of the follow-on mask by etching the narrow-image section of the 
follow-on mask from at least either a side or a top of the narrow-image section of the follow-on 
mask. 

13. (Original) The method of claim 12, ftirther comprising forming a re-shaped follow-on 
mask by re-depositing material onto the wide-image section of the follow-on mask to 

substantially align the re-shaped follow-on mask with a corresponding portion of a final shape. 



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P27195.A02 BUR920040090US1 

14. (Original) The method of claim 8, further comprising removing at least a portion of 
the narrow-image section of the follow-on mask by etching the narrow-image section of the 
follow-on mask from both a side and a top of the narrow-image section of the follow-on mask. 



15. -20 (Canceled) 



21. (New) A method of combining a wide-image mask and loop-cutter mask, comprising 

the steps of: 

forming a sidewall image transfer (SIT) hard mask loop on a substrate, wherein a narrow 
section of a target shape coincides with a portion of the hard mask loop and a wide section of the 
target shape overlaps the hard mask loop; 

forming a follow-on mask over a portion of the hard mask loop, wherein the follow-on 
mask includes a first section corresponding to the wide section of the target shape and a second 
section corresponding to the narrow section of the target shape; 

removing regions of the hard mask loop uncovered by the follow on mask; 

etching the second section of the follow-on mask to expose underlying edges of the hard 
mask loop; 

etching the first section of the follow-on mask to reduce its length and width to produce 
an image pad; and 

etching the substrate uncovered by the remaining hard mask loop and image pad. 



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P27195.A02 BUR920040090US1 

22. (New) The method of claim 21, wherein the etching the second section of the follow- 
on mask to expose underlying edges of the hard mask loop comprises completely removing the 
second section of the follow-on mask from the narrow section of the hard mask loop. 

23. (New) The method of claim 22, wherein the SIT hard mask loop is formed using a 
non-photolithographic imaging technique. 

24. (New) The method of claim 23, wherein the SIT hard mask loop is a few tens of 
nanometers wide. 

25. (New) The method of claim 1, wherein the SIT loop is formed using a non- 
photolithographic imaging technique. 

26. (New) The method of claim 25, wherein the SIT loop is a few tens of nanometers 

wide. 



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